LHF00L28
1.2.7 Block Erase, Full Chip Erase, Program and OTP Program Performance (3)
V CC =2.7V-3.6V, T A =-40 ° C to +85 ° C
23
WP#/ACC=V IL or V IH
WP#/ACC=V ACCH
Symbol
Parameter
Notes
(In System)
(In Manufacturing)
Unit
Min. Typ. (1) Max. (2) Min. Typ. (1) Max. (2)
t WPB
t WMB1
t WMB2
t WHQV1 /
t EHQV1
t WHOV1 /
t EHOV1
t WHQV2 /
t EHQV2
t WHQV3 /
t EHQV3
t WHQV4 /
t EHQV4
t WHRH1 /
t EHRH1
t WHRH2 /
t EHRH2
4-Kword Parameter Block
Program Time
32-Kword Block
Program Time
64-Kword Block
Program Time
Word Program Time
OTP Program Time
4-Kword Parameter Block
Erase Time
32-Kword Block
Erase Time
64-Kword Block
Erase Time
Full Chip Erase Time
Program Suspend
Latency Time to Read
Block Erase Suspend
Latency Time to Read
2
2
2
2
2
2
2
2
2
4
4
0.05
0.34
0.68
10
36
0.26
0.51
0.82
20
5
5
0.3
2.4
4.8
200
400
4
5
8
175
10
20
0.04
0.31
0.62
9
27
0.2
0.5
0.8
16.5
5
5
0.12
1.0
2.0
185
185
4
5
8
175
10
20
s
s
s
μ s
μ s
s
s
s
s
μ s
μ s
Latency Time from Block Erase
t ERES
Resume Command to Block
5
500
500
μ s
Erase Suspend Command
NOTES:
1. Typical values measured at V CC =3.0V, WP#/ACC=3.0V or 12.0V, and T A =+25 ° C. Assumes corresponding lock bits
are not set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1" or RY/BY#
going High Z.
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
than t ERES and its sequence is repeated, the block erase operation may not be finished.
Rev. 2.45
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